BTS621L1E3128ABUMA1 vs BTS5215LAUMA1 Comparaison
Comparaison détaillée côte à côte de BTS621L1E3128ABUMA1 par Infineon et BTS5215LAUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ Actif
Comparaison des spécifications
| Paramètre | BTS621L1E3128ABUMA1 | BTS5215LAUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,45 | $1,18 |
| Product Type | Dual-channel smart high-side power switch (PROFET) | Smart High-Side Power Switch |
| Number of Channels | 2 (dual high-side, 1:1) | 2 |
| FET Topology | N-Channel vertical power MOSFET with charge pump | — |
| On-State Resistance Rds(on) | 8 mΩ typical per channel | — |
| Nominal Operating Voltage | 12 V (automotive bus) | — |
| Maximum Supply Voltage | 24 V (load-dump survivable) | — |
| Continuous Load Current | 4.4 A per channel | — |
| Plage de température de fonctionnement | -40 °C to +150 °C junction | — |
| Boîtier | PG-TO263-7-2 (D2PAK-7, exposed tab) | PG-DSO-12-9 |
| Type de montage | Surface Mount | — |
| Input Logic Compatibility | CMOS-compatible, ground-referenced | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | Yes - open-load and overtemperature reporting | Status feedback per channel |
| Embedded Protection | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery | — |
| Technology | Smart SIPMOS (monolithic) | — |
| RoHS / Lead-Free | Compliant (Pb-free) | — |
| On-State Resistance (RDS(on)) | — | 90 mΩ typical per channel |
| Continuous Output Current per Channel | — | 3.7 A |
| Operating Voltage Range | — | 8 V to 36 V |
| Standby Current | — | Very low (datasheet value [DATA_NEEDED: standby current uA]) |
| MOSFET Technology | — | N-channel vertical power MOSFET with charge pump |
| Load Type Support | — | Resistive and inductive loads |
| Protection Features | — | Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage |
| Demagnetization | — | Fast demagnetization of inductive loads |
| Température de fonctionnement | — | -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] |
| Statut RoHS | — | Compliant |