BTS621L1E3128ABUMA1 vs BTS5215LAUMA1 Сравнение
Подробное сравнение бок о бок BTS621L1E3128ABUMA1 от Infineon и BTS5215LAUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ Активен
Сравнение характеристик
| Параметр | BTS621L1E3128ABUMA1 | BTS5215LAUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,45 | $1,18 |
| Product Type | Dual-channel smart high-side power switch (PROFET) | Smart High-Side Power Switch |
| Number of Channels | 2 (dual high-side, 1:1) | 2 |
| FET Topology | N-Channel vertical power MOSFET with charge pump | — |
| On-State Resistance Rds(on) | 8 mΩ typical per channel | — |
| Nominal Operating Voltage | 12 V (automotive bus) | — |
| Maximum Supply Voltage | 24 V (load-dump survivable) | — |
| Continuous Load Current | 4.4 A per channel | — |
| Диапазон рабочих температур | -40 °C to +150 °C junction | — |
| Корпус | PG-TO263-7-2 (D2PAK-7, exposed tab) | PG-DSO-12-9 |
| Тип монтажа | Surface Mount | — |
| Input Logic Compatibility | CMOS-compatible, ground-referenced | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | Yes - open-load and overtemperature reporting | Status feedback per channel |
| Embedded Protection | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery | — |
| Technology | Smart SIPMOS (monolithic) | — |
| RoHS / Lead-Free | Compliant (Pb-free) | — |
| On-State Resistance (RDS(on)) | — | 90 mΩ typical per channel |
| Continuous Output Current per Channel | — | 3.7 A |
| Operating Voltage Range | — | 8 V to 36 V |
| Standby Current | — | Very low (datasheet value [DATA_NEEDED: standby current uA]) |
| MOSFET Technology | — | N-channel vertical power MOSFET with charge pump |
| Load Type Support | — | Resistive and inductive loads |
| Protection Features | — | Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage |
| Demagnetization | — | Fast demagnetization of inductive loads |
| Рабочая температура | — | -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] |
| Статус RoHS | — | Compliant |