BTS621L1E3128ABUMA1 vs BTS5215LAUMA1 Vergleich
Detaillierter Direktvergleich von BTS621L1E3128ABUMA1 von Infineon und BTS5215LAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BTS621L1E3128ABUMA1 | BTS5215LAUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,45 | $1,18 |
| Product Type | Dual-channel smart high-side power switch (PROFET) | Smart High-Side Power Switch |
| Number of Channels | 2 (dual high-side, 1:1) | 2 |
| FET Topology | N-Channel vertical power MOSFET with charge pump | — |
| On-State Resistance Rds(on) | 8 mΩ typical per channel | — |
| Nominal Operating Voltage | 12 V (automotive bus) | — |
| Maximum Supply Voltage | 24 V (load-dump survivable) | — |
| Continuous Load Current | 4.4 A per channel | — |
| Betriebstemperaturbereich | -40 °C to +150 °C junction | — |
| Gehäuse | PG-TO263-7-2 (D2PAK-7, exposed tab) | PG-DSO-12-9 |
| Montageart | Surface Mount | — |
| Input Logic Compatibility | CMOS-compatible, ground-referenced | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | Yes - open-load and overtemperature reporting | Status feedback per channel |
| Embedded Protection | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery | — |
| Technology | Smart SIPMOS (monolithic) | — |
| RoHS / Lead-Free | Compliant (Pb-free) | — |
| On-State Resistance (RDS(on)) | — | 90 mΩ typical per channel |
| Continuous Output Current per Channel | — | 3.7 A |
| Operating Voltage Range | — | 8 V to 36 V |
| Standby Current | — | Very low (datasheet value [DATA_NEEDED: standby current uA]) |
| MOSFET Technology | — | N-channel vertical power MOSFET with charge pump |
| Load Type Support | — | Resistive and inductive loads |
| Protection Features | — | Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage |
| Demagnetization | — | Fast demagnetization of inductive loads |
| Betriebstemperatur | — | -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] |
| RoHS-Status | — | Compliant |