BTS621L1E3128ABUMA1 vs BTS5215LAUMA1 对比

详细并排对比 BTS621L1E3128ABUMA1 出自 Infineon 和 BTS5215LAUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BTS621L1E3128ABUMA1 BTS5215LAUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.45 $1.18
Product Type Dual-channel smart high-side power switch (PROFET) Smart High-Side Power Switch
Number of Channels 2 (dual high-side, 1:1) 2
FET Topology N-Channel vertical power MOSFET with charge pump —
On-State Resistance Rds(on) 8 mΩ typical per channel —
Nominal Operating Voltage 12 V (automotive bus) —
Maximum Supply Voltage 24 V (load-dump survivable) —
Continuous Load Current 4.4 A per channel —
工作温度范围 -40 °C to +150 °C junction —
封装 PG-TO263-7-2 (D2PAK-7, exposed tab) PG-DSO-12-9
安装类型 Surface Mount —
Input Logic Compatibility CMOS-compatible, ground-referenced CMOS-compatible, ground-referenced
Diagnostic Feedback Yes - open-load and overtemperature reporting Status feedback per channel
Embedded Protection Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery —
Technology Smart SIPMOS (monolithic) —
RoHS / Lead-Free Compliant (Pb-free) —
On-State Resistance (RDS(on)) — 90 mΩ typical per channel
Continuous Output Current per Channel — 3.7 A
Operating Voltage Range — 8 V to 36 V
Standby Current — Very low (datasheet value [DATA_NEEDED: standby current uA])
MOSFET Technology — N-channel vertical power MOSFET with charge pump
Load Type Support — Resistive and inductive loads
Protection Features — Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage
Demagnetization — Fast demagnetization of inductive loads
工作温度 — -40C to +150C (TJ) [DATA_NEEDED: ambient range exact]
RoHS 状态 — Compliant

数据手册与资源

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