BTS621L1E3128ABUMA1 vs BTS5215LAUMA1 比較

詳細な並列比較: BTS621L1E3128ABUMA1 メーカー: Infineon および BTS5215LAUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

仕様比較

パラメータ BTS621L1E3128ABUMA1 BTS5215LAUMA1
ブランド Infineon Infineon
カテゴリ Power MOSFET Drivers Power MOSFET Drivers
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $2.45 $1.18
Product Type Dual-channel smart high-side power switch (PROFET) Smart High-Side Power Switch
Number of Channels 2 (dual high-side, 1:1) 2
FET Topology N-Channel vertical power MOSFET with charge pump —
On-State Resistance Rds(on) 8 mΩ typical per channel —
Nominal Operating Voltage 12 V (automotive bus) —
Maximum Supply Voltage 24 V (load-dump survivable) —
Continuous Load Current 4.4 A per channel —
動作温度範囲 -40 °C to +150 °C junction —
パッケージ PG-TO263-7-2 (D2PAK-7, exposed tab) PG-DSO-12-9
実装タイプ Surface Mount —
Input Logic Compatibility CMOS-compatible, ground-referenced CMOS-compatible, ground-referenced
Diagnostic Feedback Yes - open-load and overtemperature reporting Status feedback per channel
Embedded Protection Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery —
Technology Smart SIPMOS (monolithic) —
RoHS / Lead-Free Compliant (Pb-free) —
On-State Resistance (RDS(on)) — 90 mΩ typical per channel
Continuous Output Current per Channel — 3.7 A
Operating Voltage Range — 8 V to 36 V
Standby Current — Very low (datasheet value [DATA_NEEDED: standby current uA])
MOSFET Technology — N-channel vertical power MOSFET with charge pump
Load Type Support — Resistive and inductive loads
Protection Features — Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage
Demagnetization — Fast demagnetization of inductive loads
動作温度 — -40C to +150C (TJ) [DATA_NEEDED: ambient range exact]
RoHS ステータス — Compliant

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