BTS621L1E3128ABUMA1 vs BTS5215LAUMA1 비교

다음의 상세 나란히 비교: BTS621L1E3128ABUMA1 제조: Infineon 및 BTS5215LAUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS621L1E3128ABUMA1 BTS5215LAUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.45 $1.18
Product Type Dual-channel smart high-side power switch (PROFET) Smart High-Side Power Switch
Number of Channels 2 (dual high-side, 1:1) 2
FET Topology N-Channel vertical power MOSFET with charge pump —
On-State Resistance Rds(on) 8 mΩ typical per channel —
Nominal Operating Voltage 12 V (automotive bus) —
Maximum Supply Voltage 24 V (load-dump survivable) —
Continuous Load Current 4.4 A per channel —
동작 온도 범위 -40 °C to +150 °C junction —
패키지 PG-TO263-7-2 (D2PAK-7, exposed tab) PG-DSO-12-9
실장 유형 Surface Mount —
Input Logic Compatibility CMOS-compatible, ground-referenced CMOS-compatible, ground-referenced
Diagnostic Feedback Yes - open-load and overtemperature reporting Status feedback per channel
Embedded Protection Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery —
Technology Smart SIPMOS (monolithic) —
RoHS / Lead-Free Compliant (Pb-free) —
On-State Resistance (RDS(on)) — 90 mΩ typical per channel
Continuous Output Current per Channel — 3.7 A
Operating Voltage Range — 8 V to 36 V
Standby Current — Very low (datasheet value [DATA_NEEDED: standby current uA])
MOSFET Technology — N-channel vertical power MOSFET with charge pump
Load Type Support — Resistive and inductive loads
Protection Features — Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage
Demagnetization — Fast demagnetization of inductive loads
동작 온도 — -40C to +150C (TJ) [DATA_NEEDED: ambient range exact]
RoHS 상태 — Compliant

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