FDD8896 vs FDD8896-F085 Comparison

Detailed side-by-side comparison of FDD8896 by onsemi and FDD8896-F085 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter FDD8896 FDD8896-F085
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Eol Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.32
Transistor Type N-Channel PowerTrench MOSFET β€”
Drain-Source Voltage (Vdss) 30 V 30 V
Continuous Drain Current (Id) at Ta 17 A β€”
Continuous Drain Current (Id) at Tc 94 A β€”
Drain-Source On-Resistance (rDS(ON)) 5.7 mOhm β€”
Power Dissipation (Pd) at Tc 80 W β€”
Gate Charge (Qg) [DATA_NEEDED: Gate Charge] β€”
Gate-Source Voltage (Vgs) Max [DATA_NEEDED: Vgs Max] 20 V
Technology PowerTrench (trench MOSFET) PowerTrench (Trench-Gate)
Mounting Type Surface Mount Surface Mount
Package TO-252 (DPAK), 3-Pin (2+Tab) TO-252 (DPAK)
Pin Count 3 3 (Gate, Drain, Source)
Configuration Single FET β€”
Typical Application DC/DC converters, synchronous PWM controllers β€”
Manufacturer Fairchild Semiconductor (now onsemi) onsemi (Fairchild Semiconductor)
Packing Tape & Reel (T/R) β€”
FET Type β€” N-Channel MOSFET
Continuous Drain Current (Id) at Tc=25C β€” 94 A
Continuous Drain Current (Id) at Ta=25C β€” 17 A
Rds(on) Max at Vgs=10V β€” 5.7 mOhm
Maximum Power Dissipation (Pd) at Tc=25C β€” 80 W
Gate Threshold Voltage (Vgs(th)) Typ β€” 2.0 V
Operating Temperature Range β€” -55C to +150C (Tj)
Automotive Qualification β€” AEC-Q101
RoHS / Halogen-Free Status β€” Compliant / Halogen-Free
Lead-Free β€” Yes
MSL Level β€” 1

Datasheets & Resources

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