FDD8896 vs FDD8896-F085 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng FDD8896 sa pamamagitan ng onsemi at FDD8896-F085 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro FDD8896 FDD8896-F085
Brand onsemi onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Tapus ng Buhay Obsolete
Uri ng Transistor N-Channel PowerTrench MOSFET —
Drain-Source Voltage (Vdss) 30 V 30 V
Continuous Drain Current (Id) at Ta 17 A —
Continuous Drain Current (Id) at Tc 94 A —
Drain-Source On-Resistance (rDS(ON)) 5.7 mOhm —
Power Dissipation (Pd) at Tc 80 W —
Gate Charge (Qg) [DATA_NEEDED: Gate Charge] —
Gate-Source Voltage (Vgs) Max [DATA_NEEDED: Vgs Max] 20 V
Technology PowerTrench (trench MOSFET) PowerTrench (Trench-Gate)
Uri ng Pagpapasok Surface Mount Surface Mount
Packhaging TO-252 (DPAK), 3-Pin (2+Tab) TO-252 (DPAK)
Bilang ng Pin 3 3 (Gate, Drain, Source)
Configuration Single FET —
Typical Application DC/DC converters, synchronous PWM controllers —
Manufacturer Fairchild Semiconductor (now onsemi) onsemi (Fairchild Semiconductor)
Packing Tape & Reel (T/R) —
FET Type — N-Channel MOSFET
Continuous Drain Current (Id) at Tc=25C — 94 A
Continuous Drain Current (Id) at Ta=25C — 17 A
Rds(on) Max at Vgs=10V — 5.7 mOhm
Maximum Power Dissipation (Pd) at Tc=25C — 80 W
Gate Threshold Voltage (Vgs(th)) Typ — 2.0 V
Hanay ng Temperature na Operasyon — -55C to +150C (Tj)
Automotive Qualification — AEC-Q101
RoHS / Halogen-Free Status — Compliant / Halogen-Free
Lead-Free — Yes
Level ng MSL — 1

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