FQP50N06 vs IRFZ44NSTRLPBF Comparison
Detailed side-by-side comparison of FQP50N06 by onsemi and IRFZ44NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | FQP50N06 | IRFZ44NSTRLPBF |
|---|---|---|
| Brand | onsemi | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.93 |
| Manufacturer | onsemi (formerly Fairchild Semiconductor) | — |
| Part Number | FQP50N06 | — |
| Transistor Type | N-Channel MOSFET | — |
| Technology | Planar Stripe DMOS | HEXFET |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at Tc | 120 W | — |
| On-Resistance Rds(on) max at VGS=10V | [DATA_NEEDED: Rds(on) max] | — |
| On-Resistance Rds(on) typical at VGS=10V | 0.022 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | 42 nC |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +175C |
| Package | TO-220-3 (through-hole) | D2PAK (TO-263) |
| Mounting Type | Through Hole | Surface Mount |
| Channel Mode | Enhancement | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 49 A |
| Drain-Source On-Resistance RDS(on) max | — | 17.5 mOhm at VGS=10V |
| Power Dissipation (TC) | — | 94 W |
| Power Dissipation (TA) | — | 3.8 W |
| Lead-Free (PBF suffix) | — | Yes |