FQP50N06 vs IRFZ44NSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng FQP50N06 sa pamamagitan ng onsemi at IRFZ44NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro FQP50N06 IRFZ44NSTRLPBF
Brand onsemi Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer onsemi (formerly Fairchild Semiconductor) —
Part Number FQP50N06 —
Uri ng Transistor N-Channel MOSFET —
Technology Planar Stripe DMOS HEXFET
Drain-Source Voltage (V(BR)DSS) 60 V —
Continuous Drain Current (ID) at Tc 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at Tc 120 W —
On-Resistance Rds(on) max at VGS=10V [DATA_NEEDED: Rds(on) max] —
On-Resistance Rds(on) typical at VGS=10V 0.022 ohm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) [DATA_NEEDED: Qg] 42 nC
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55C to +175C
Packhaging TO-220-3 (through-hole) D2PAK (TO-263)
Uri ng Pagpapasok Through Hole Surface Mount
Channel Mode Enhancement —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 49 A
Drain-Source On-Resistance RDS(on) max — 17.5 mOhm at VGS=10V
Power Dissipation (TC) — 94 W
Power Dissipation (TA) — 3.8 W
Lead-Free (PBF suffix) — Yes

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