H5AN4G6NBJR-UHC vs H5AN4G6NBJR-VKC Comparison

Detailed side-by-side comparison of H5AN4G6NBJR-UHC by SK hynix and H5AN4G6NBJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN4G6NBJR-VKC H5AN4G6NBJR-VKC - 4Gb DDR4 SDRAM 2666Mbps x16 | SK Hynix

H5AN4G6NBJR-VKC - 4Gb DDR4 SDRAM 2666Mbps x16 | SK Hynix

H5AN4G6NBJR-VKC ✓ Active

Specification Comparison

Parameter H5AN4G6NBJR-UHC H5AN4G6NBJR-VKC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.09 $12.96
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 4 Gbit 4 Gbit
Organization 256M x 16 —
Clock Frequency 1.6 GHz 1.6 GHz (internal reference per distributor data)
Supply Voltage (VDD) 1.14 V to 1.26 V 1.2 V nominal (1.14 V to 1.26 V)
Technology CMOS CMOS
Operating Temperature -40C to +95C -40C to +95C
Package FBGA-96 (PBGA-96) FBGA-96 / TFBGA (PBGA96)
Mounting Type Surface Mount Surface Mount
Self Refresh Auto self-refresh —
Data Mask Function Yes (DM) —
Asynchronous Reset Yes (RESET_n) —
On-Die Termination Dynamic ODT —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes (command/address CRC) —
RoHS Status Compliant Compliant
Memory Organization — 256M x 16
Data Rate — 2666 Mbps
Operating Current — 38 mA (typical, per distributor data)
Interface — Parallel
Body Size — 13 mm, 1.2 mm profile, 0.8 mm ball pitch
Termination — Dynamic on-chip termination (ODT)
Calibration — ZQ calibration; write leveling
Protection Functions — Asynchronous reset; CRC; data mask
Refresh — Auto self-refresh
Packaging — Tray

Datasheets & Resources

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