H5AN4G6NBJR-UHC vs H5AN4G6NBJR-VKC 对比
详细并排对比 H5AN4G6NBJR-UHC 出自 SK hynix 和 H5AN4G6NBJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G6NBJR-UHC | H5AN4G6NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.09 | $12.96 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gbit | 4 Gbit |
| 存储组织 | 256M x 16 | — |
| Clock Frequency | 1.6 GHz | 1.6 GHz (internal reference per distributor data) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | 1.2 V nominal (1.14 V to 1.26 V) |
| Technology | CMOS | CMOS |
| 工作温度 | -40C to +95C | -40C to +95C |
| 封装 | FBGA-96 (PBGA-96) | FBGA-96 / TFBGA (PBGA96) |
| 安装类型 | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| RoHS 状态 | Compliant | Compliant |
| Memory Organization | — | 256M x 16 |
| 数据速率 | — | 2666 Mbps |
| Operating Current | — | 38 mA (typical, per distributor data) |
| 接口 | — | Parallel |
| Body Size | — | 13 mm, 1.2 mm profile, 0.8 mm ball pitch |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration; write leveling |
| Protection Functions | — | Asynchronous reset; CRC; data mask |
| Refresh | — | Auto self-refresh |
| Packaging | — | Tray |