H5AN4G6NBJR-UHC vs MT40A256M16GE-083E Comparison
Detailed side-by-side comparison of H5AN4G6NBJR-UHC by SK hynix and MT40A256M16GE-083E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ End of LifeSpecification Comparison
| Parameter | H5AN4G6NBJR-UHC | MT40A256M16GE-083E |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.09 | $2.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Clock Frequency | 1.6 GHz | 1200 MHz (DDR4-2400) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| Technology | CMOS | CMOS DRAM |
| Operating Temperature | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| Package | FBGA-96 (PBGA-96) | 96-ball FBGA, 9 x 14 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| RoHS Status | Compliant | — |
| Density | — | 4 Gbit |
| Supply Voltage | — | 1.2 V |
| Interface | — | Parallel |
| ECCN | — | EAR99 |
| Country of Origin | — | China |
| Halogen Free | — | Compliant |
| Lead Free | — | Yes |
| Introduction Date | — | August 2017 |
| Lifecycle | — | Obsolete / End of Life (per distributor cross-reference data) |
| CAS Latency | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Refresh | — | [DATA_NEEDED: refresh rate] |