H5AN4G6NBJR-UHC vs MT40A256M16GE-083E 对比
详细并排对比 H5AN4G6NBJR-UHC 出自 SK hynix 和 MT40A256M16GE-083E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ 停产规格对比
| 参数 | H5AN4G6NBJR-UHC | MT40A256M16GE-083E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.09 | $2.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| Clock Frequency | 1.6 GHz | 1200 MHz (DDR4-2400) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| Technology | CMOS | CMOS DRAM |
| 工作温度 | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| 封装 | FBGA-96 (PBGA-96) | 96-ball FBGA, 9 x 14 mm |
| 安装类型 | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes (DM) | — |
| Asynchronous Reset | Yes (RESET_n) | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes (command/address CRC) | — |
| RoHS 状态 | Compliant | — |
| Density | — | 4 Gbit |
| 电源电压 | — | 1.2 V |
| 接口 | — | Parallel |
| ECCN | — | EAR99 |
| Country of Origin | — | China |
| 无卤 | — | Compliant |
| Lead Free | — | Yes |
| Introduction Date | — | August 2017 |
| Lifecycle | — | Obsolete / End of Life (per distributor cross-reference data) |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Refresh | — | [DATA_NEEDED: refresh rate] |