H5AN8G6NAFR-UHC vs K4A8G085WC Comparison
Detailed side-by-side comparison of H5AN8G6NAFR-UHC by SK hynix and K4A8G085WC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ ActiveSpecification Comparison
| Parameter | H5AN8G6NAFR-UHC | K4A8G085WC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.74 | $24.90 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organization | 512M x 16 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 2400 MT/s | — |
| Package | FBGA-96 | 78-ball FBGA (78FBGA) |
| Operating Temperature | 0°C to +85°C | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | 8, 4 (with burst chop) | — |
| Refresh | Auto self-refresh | — |
| Speed | — | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage Range | — | 1.14 V to 1.26 V |
| Clock Frequency | — | 1333 MHz (1333.333 GHz nominal, per web data) |
| Operating Temperature (K4A8G085WC-BITD) | — | -40 C to +95 C |
| Operating Temperature (K4A8G085WC-BCTD) | — | 0 C to +95 C |
| Mounting Type | — | Surface Mount |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Data Mask (DM) | — | Yes |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |