H5AN8G6NDJR-UHC vs H5AN8G6NCJR-VKC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-UHC by SK hynix and H5AN8G6NCJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5AN8G6NDJR-UHC
H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix
H5AN8G6NDJR-UHC β ActiveSK hynix
H5AN8G6NCJR-VKC
H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
H5AN8G6NCJR-VKC β ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR-UHC | H5AN8G6NCJR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $34.60 | $60.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Speed Grade | 3200 Mbps (PC4-25600) | β |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (1.14V to 1.26V) |
| Supply Voltage (VDDQ) | 1.2 V | β |
| Number of Terminals | 96 | β |
| Package | FBGA-96 (13x7.5 mm) | FBGA-96 |
| Package Shape | RECTANGULAR | β |
| JESD-30 Code | R-PBGA-B96 | β |
| Maximum Operating Temperature | 85 Β°C | β |
| Minimum Operating Temperature | 0 Β°C | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | Yes |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling | β |
| Data Rate | β | 2666 Mbps |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Operating Current (IDD2N) | β | 28 mA |
| Operating Current (IDD4R) | β | 45 mA |
| Burst Length | β | 8 (BC4) |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Row Address Bits | β | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | β | [DATA_NEEDED: Column Address Bits] |