H5AN8G6NDJR-UHC vs K4A8G165WB-BIWE Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-UHC by SK hynix and K4A8G165WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NDJR-UHC | K4A8G165WB-BIWE |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $34.60 | $14.22 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Speed Grade | 3200 Mbps (PC4-25600) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Number of Terminals | 96 | — |
| Package | FBGA-96 (13x7.5 mm) | 96-ball FBGA |
| Package Shape | RECTANGULAR | — |
| JESD-30 Code | R-PBGA-B96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Minimum Operating Temperature | 0 °C | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling | — |
| Data Rate | — | 3200 Mbps |
| Supply Voltage | — | 1.2 V |
| Operating Temperature | — | -40°C to +95°C |
| Interface | — | Parallel |
| Burst Length | — | 8, 16 |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh | — | Auto-refresh, Self-refresh |
| On-Die Termination | — | Yes |
| Mounting Type | — | Surface Mount |
| Number of Pins | — | 96 |