H5AN8G6NDJR-UHC vs K4A8G165WB-BIWE 对比
详细并排对比 H5AN8G6NDJR-UHC 出自 SK hynix 和 K4A8G165WB-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NDJR-UHC | K4A8G165WB-BIWE |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $34.60 | $14.22 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 512M x 16 | 512M x 16 |
| Speed Grade | 3200 Mbps (PC4-25600) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Number of Terminals | 96 | — |
| 封装 | FBGA-96 (13x7.5 mm) | 96-ball FBGA |
| Package Shape | RECTANGULAR | — |
| JESD-30 Code | R-PBGA-B96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Minimum Operating Temperature | 0 °C | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling | — |
| 数据速率 | — | 3200 Mbps |
| 电源电压 | — | 1.2 V |
| 工作温度 | — | -40°C to +95°C |
| 接口 | — | Parallel |
| Burst Length | — | 8, 16 |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Refresh | — | Auto-refresh, Self-refresh |
| On-Die Termination | — | Yes |
| 安装类型 | — | Surface Mount |
| 引脚数 | — | 96 |