H5AN8G6NDJR-XNC vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-XNC by SK hynix and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NDJR-XNC | K4A8G085WC-BIWE |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $55.68 | $6.29 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 512M x16 | — |
| Data Rate | 3200 Mbps | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | 1.2 V |
| Package | FBGA-96 (13x7.5 mm) | 78-FBGA |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Density | — | 8 Gb |
| Organization | — | 1G x 8 |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Operating Temperature Range | — | -40°C to +95°C |
| Mounting Type | — | Surface Mount |
| Interface | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS Latency | — | 22 (CL22) |
| Refresh | — | Auto-refresh, self-refresh |
| RoHS Status | — | Compliant |