H5AN8G6NDJR-XNC vs K4A8G085WC-BIWE 对比
详细并排对比 H5AN8G6NDJR-XNC 出自 SK hynix 和 K4A8G085WC-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NDJR-XNC | K4A8G085WC-BIWE |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $55.68 | $6.29 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb | — |
| Memory Organization | 512M x16 | — |
| 数据速率 | 3200 Mbps | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | 1.2 V |
| 封装 | FBGA-96 (13x7.5 mm) | 78-FBGA |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Density | — | 8 Gb |
| 存储组织 | — | 1G x 8 |
| Supply Voltage (VDDQ) | — | 1.2 V |
| 工作温度范围 | — | -40°C to +95°C |
| 安装类型 | — | Surface Mount |
| 接口 | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS 延迟 | — | 22 (CL22) |
| Refresh | — | Auto-refresh, self-refresh |
| RoHS 状态 | — | Compliant |