H5AN8G6NDJR vs IS43QR16512B-062AABL Comparison

Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and IS43QR16512B-062AABL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G6NDJR H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix

H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix

H5AN8G6NDJR ✓ Active
ISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI

IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI

IS43QR16512B-062AABL ✓ Active

Specification Comparison

Parameter H5AN8G6NDJR IS43QR16512B-062AABL
Brand SK hynix ISSI, Integrated Silicon Solution Inc
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $35.00 $8.10
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
Organization 512M x 16 512M x 16
Data Rate 3200 Mbps (DDR4-3200) 3200 MT/s
Supply Voltage 1.2 V 1.2 V
Package 96-ball FBGA (13mm x 7.5mm) 96-TWBGA (7.5x13.5 mm)
Number of Terminals 96 —
Maximum Supply Voltage (Vsup) 1.26 V —
Maximum Operating Temperature 85 °C —
Burst Length 8 (BL8), 4 (BC4) —
CAS Latency 22 cycles (at 3200 Mbps) 22-22-22
Access Mode Multi Bank Page Burst —
JESD-30 Code R-PBGA-B96 —
RoHS Compliant Compliant
Features Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling —
Memory Size — 8 Gbit
tRCD — 19 ns
Operating Temperature — 0°C to +95°C (case)
Mounting Type — Surface Mount
Number of Pins — 96
Interface — POD (Pseudo Open Drain)
Clock Frequency — 1.6 GHz
Data Bus Width — 16 bit

Datasheets & Resources

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