H5TC4G63AFR-PBJ vs H5TC4G63AFR-PBI Comparison
Detailed side-by-side comparison of H5TC4G63AFR-PBJ by SK hynix and H5TC4G63AFR-PBI by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5TC4G63AFR-PBJ | H5TC4G63AFR-PBI |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Obsolete |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb (256M x 16) | — |
| Supply Voltage | 1.35 V | 1.35 V |
| Package | 96-ball TFBGA | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | 96 |
| Data Rate | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | DDR3-1600 (PC3L-12800) |
| CAS Latency | [DATA_NEEDED: CAS Latency] | Programmable |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| RoHS Status | [DATA_NEEDED: RoHS Status] | Compliant |
| Organization | — | 256M x 16 |
| Total Memory Size | — | 4 Gb |
| Number of Banks | — | 8 |
| Burst Length | — | 8 (BL8) |
| On-Die Termination (ODT) | — | Yes |
| Refresh Period | — | 7.8 us at 85°C |
| Operating Temperature Range | — | -40°C to +95°C |
| Mounting Type | — | Surface Mount |