H5TC4G63AFR-PBJ vs NT5CC256M16ER-EK Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBJ disebabkan oleh SK hynix dan NT5CC256M16ER-EK disebabkan oleh Nanya Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63AFR-PBJ | NT5CC256M16ER-EK |
|---|---|---|
| Merek | SK hynix | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gb (256M x 16) | — |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V |
| Kemasan | 96-ball TFBGA | TFBGA-96 |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Kadar Data | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 933 MHz (DDR3L-1866) |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS Latency] |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | Yes |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Compliant |
| Density | — | 4 Gbit |
| Organisasi | — | 256M x 16 |
| Suhu Operasi | — | 0°C to +95°C |
| Burst Length | — | 8, 4 (with burst chop) |
| Antaramuka | — | Parallel |
| Jenis Pemasangan | — | Surface Mount |
| Lead-Free | — | Yes |
| Dynamic ODT | — | Yes |