H5TC4G63CFR-H9A vs K4B4G1646E-BYK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63CFR-H9A disebabkan oleh SK hynix dan K4B4G1646E-BYK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63CFR-H9A | K4B4G1646E-BYK0 |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Memory Density | 4Gb (4294967296 bit) | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD) | 1.35V + 0.100 / - 0.067V | — |
| Supply Voltage (VDDQ) | 1.35V + 0.100 / - 0.067V | — |
| Kemasan | 96-ball TFBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Number of Terminals | 96 | — |
| Package Shape | RECTANGULAR | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: Operating temperature range] | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Kadar Data | [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] | DDR3-1600 (800 MHz) |
| Latensi CAS | [DATA_NEEDED: CAS latency] | 11 (CL-tRCD-tRP) |
| Burst Length | 8, 4 (with burst chop) | 8 (fixed), 4 (burst chop) |
| Differential Clock Inputs | Yes (CK, CK) | — |
| Differential Data Strobe | Yes (DQS, DQS) | — |
| On-Chip DLL | Yes | — |
| DM (Data Mask) | Yes | — |
| Density | — | 4 Gb |
| Tegangan Pemberi Arus | — | 1.35 V (1.283 V to 1.45 V) |
| Suhu Operasi | — | 0°C to +95°C (TC) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |