H5TC4G63CFR-H9A vs K4B4G1646E-BYK0 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63CFR-H9A sa pamamagitan ng SK hynix at K4B4G1646E-BYK0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63CFR-H9A | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Memory Density | 4Gb (4294967296 bit) | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD) | 1.35V + 0.100 / - 0.067V | — |
| Supply Voltage (VDDQ) | 1.35V + 0.100 / - 0.067V | — |
| Packhaging | 96-ball TFBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Number of Terminals | 96 | — |
| Package Shape | RECTANGULAR | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Operating temperature range] | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Rate ng Data | [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] | DDR3-1600 (800 MHz) |
| Latensya ng CAS | [DATA_NEEDED: CAS latency] | 11 (CL-tRCD-tRP) |
| Burst Length | 8, 4 (with burst chop) | 8 (fixed), 4 (burst chop) |
| Differential Clock Inputs | Yes (CK, CK) | — |
| Differential Data Strobe | Yes (DQS, DQS) | — |
| On-Chip DLL | Yes | — |
| DM (Data Mask) | Yes | — |
| Density | — | 4 Gb |
| Volte ng Pagbibigay | — | 1.35 V (1.283 V to 1.45 V) |
| Temperature na Operasyon | — | 0°C to +95°C (TC) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |