IAUC50N08S5L096ATMA1 vs IAUC90N10S5N062ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC50N08S5L096ATMA1 disebabkan oleh Infineon dan IAUC90N10S5N062ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC50N08S5L096ATMA1 IAUC90N10S5N062ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
Gambaran Suhu Operasi -55°C to +175°C —
Kemasan PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-34 (TDSON-8)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Status RoHS Compliant —
Lead-Free Yes Yes
Aras MSL [DATA_NEEDED: MSL level] —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 90 A
Maximum On-Resistance RDS(on) max at VGS=10V — 6.2 mOhm
Gate-Source Threshold Voltage VGS(th) typ — 3.8 V
Maximum Power Dissipation (Tc=25C) — 115 W
Suhu Hubungan Operasi — -55 C to +175 C
Technology — Trench MOSFET (OptiMOS 5, Generation 5)
Avalanche Rated — Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) — MSL1 (260 C peak reflow)
RoHS / Green Product — Yes (RoHS compliant, Green Product)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga