IAUC50N08S5L096ATMA1 vs IAUC90N10S5N062ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC50N08S5L096ATMA1 dari Infineon dan IAUC90N10S5N062ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC50N08S5L096ATMA1 IAUC90N10S5N062ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
Rentang Suhu Kerja -55°C to +175°C —
Paket PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-34 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Status RoHS Compliant —
Lead-Free Yes Yes
Level MSL [DATA_NEEDED: MSL level] —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 90 A
Maximum On-Resistance RDS(on) max at VGS=10V — 6.2 mOhm
Gate-Source Threshold Voltage VGS(th) typ — 3.8 V
Maximum Power Dissipation (Tc=25C) — 115 W
Suhu Hubung Kerja — -55 C to +175 C
Technology — Trench MOSFET (OptiMOS 5, Generation 5)
Avalanche Rated — Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) — MSL1 (260 C peak reflow)
RoHS / Green Product — Yes (RoHS compliant, Green Product)

Spek dan Sumber

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