IAUC60N10S5L110ATMA1 vs IAUC120N06S5N022ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC60N10S5L110ATMA1 sa pamamagitan ng Infineon at IAUC120N06S5N022ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC60N10S5L110ATMA1 IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 ✓ Nakahanda
Infineon
IAUC120N06S5N022ATMA1 IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N022ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC60N10S5L110ATMA1 IAUC120N06S5N022ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS™-5 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>, Tc) 60 A —
Power Dissipation (P<sub>D</sub>, Tc) 88 W —
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V 11 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 1.2 V —
Packhaging PG-TDSON-8-33 (TDSON-8 Single) PG-TDSON-8-34 (TDSON EP 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon [DATA_NEEDED: min/max operating temperature] [DATA_NEEDED: TJ min/max]
Gate-Source Voltage (V<sub>GS</sub>) Max [DATA_NEEDED: VGS max rating] —
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Qg at specified Vgs] —
Avalanche Energy (E<sub>AS</sub>) [DATA_NEEDED: single-pulse avalanche energy] —
Lead-Free / RoHS Yes (RoHS compliant per LCSC listing) —
Packing Code ATMA1 (Tape & Reel) —
Level ng MSL 1 (per LCSC datasheet snippet) —
Wala sa Halogen Yes (per Infineon product classification) Yes (per Infineon product family convention)
Customer Info / FGR J52 (per Infineon product data) —
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) — 170 A (Tj)
On-Resistance RDS(on) max — 2.2 mΩ at VGS=10 V
Power Dissipation (PD) — 136 W (Tc)
Technology — OptiMOS-5 trench
Channel Type — N-Channel
Bilang ng Pin — 8 (with exposed pad)
Automotive Qualification — AEC-Q101
Tindminan RoHS — Compliant
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) @4.5V]

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita