IAUC60N10S5L110ATMA1 vs IAUC120N06S5N022ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUC60N10S5L110ATMA1 tarafından Infineon ve IAUC120N06S5N022ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUC60N10S5L110ATMA1 | IAUC120N06S5N022ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™-5 | — |
| Transistor Türü | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| Paket | PG-TDSON-8-33 (TDSON-8 Single) | PG-TDSON-8-34 (TDSON EP 5x6) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: min/max operating temperature] | [DATA_NEEDED: TJ min/max] |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| MSL Seviyesi | 1 (per LCSC datasheet snippet) | — |
| Klorürsüz | Yes (per Infineon product classification) | Yes (per Infineon product family convention) |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) | — | 170 A (Tj) |
| On-Resistance RDS(on) max | — | 2.2 mΩ at VGS=10 V |
| Power Dissipation (PD) | — | 136 W (Tc) |
| Technology | — | OptiMOS-5 trench |
| Channel Type | — | N-Channel |
| Pin Sayısı | — | 8 (with exposed pad) |
| Automotive Qualification | — | AEC-Q101 |
| RoHS Durumu | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) @4.5V] |