IAUCN04S7N019DATMA1 vs IAUCN04S7N019GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N019DATMA1 by Infineon and IAUCN04S7N019GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN04S7N019DATMA1 IAUCN04S7N019GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 7 40V —
Configuration Dual N-Channel (array) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc) 160 A (Tj) —
Power Dissipation (PD, Tc) 96 W —
Package PG-TDSON-8-60 (SuperSO8) PG-THSOG-4-1 (SSO4G 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +175 C —
Input Capacitance (Ciss, typ.) 1.465 nF —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Automotive Qualification AEC-Q101 (family) AEC-Q101 (per family datasheet)
ESD Protection Yes (gate integrated) —
MSL Level 1 (per JEDEC J-STD-020, family default) —
RoHS Status Compliant Compliant
Product Family — OptiMOS 7
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)
Operating Temperature Range — [DATA_NEEDED: junction temperature range from datasheet]

Datasheets & Resources

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