IAUCN04S7N019DATMA1 vs IAUCN04S7N019GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N019DATMA1 disebabkan oleh Infineon dan IAUCN04S7N019GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7N019DATMA1 IAUCN04S7N019GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 7 40V —
Configuration Dual N-Channel (array) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc) 160 A (Tj) —
Power Dissipation (PD, Tc) 96 W —
Kemasan PG-TDSON-8-60 (SuperSO8) PG-THSOG-4-1 (SSO4G 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55 C to +175 C —
Input Capacitance (Ciss, typ.) 1.465 nF —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Automotive Qualification AEC-Q101 (family) AEC-Q101 (per family datasheet)
ESD Protection Yes (gate integrated) —
Aras MSL 1 (per JEDEC J-STD-020, family default) —
Status RoHS Compliant Compliant
Product Family — OptiMOS 7
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)
Gambaran Suhu Operasi — [DATA_NEEDED: junction temperature range from datasheet]

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