IAUCN08S7L033ATMA1 vs IAUC41N06S5N102ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L033ATMA1 disebabkan oleh Infineon dan IAUC41N06S5N102ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7L033ATMA1 IAUC41N06S5N102ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V 60 V
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55C to +175C (junction)
Kemasan PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8-33 (SSO8) Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) —
Technology OptiMOS 7 trench MOSFET —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020, typical for this package) —
Part Family — OptiMOS 5 Power-Transistor
Continuous Drain Current (ID, Tc) — 47 A (Tj)
Power Dissipation (PD, Tc=25C) — 42 W
On-Resistance (RDS(on)) — 10.2 mΩ at VGS=10 V, ID=20 A
Gate-Source Threshold (VGS(th)) — 3.4 V (typical)
Total Gate Charge (QG) — 12.5 nC
Automotive Qualification — AEC-Q101 (per Infineon automotive MOSFET family)
Channel Polarity — N-Channel (single)

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