IAUCN08S7L033ATMA1 vs IAUC41N06S5N102ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7L033ATMA1 dari Infineon dan IAUC41N06S5N102ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7L033ATMA1 IAUC41N06S5N102ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V 60 V
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
Rentang Suhu Kerja -55°C to +175°C (TJ) -55C to +175C (junction)
Paket PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8-33 (SSO8) Surface Mount
Tipe Mounting Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) —
Technology OptiMOS 7 trench MOSFET —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020, typical for this package) —
Part Family — OptiMOS 5 Power-Transistor
Continuous Drain Current (ID, Tc) — 47 A (Tj)
Power Dissipation (PD, Tc=25C) — 42 W
On-Resistance (RDS(on)) — 10.2 mΩ at VGS=10 V, ID=20 A
Gate-Source Threshold (VGS(th)) — 3.4 V (typical)
Total Gate Charge (QG) — 12.5 nC
Automotive Qualification — AEC-Q101 (per Infineon automotive MOSFET family)
Channel Polarity — N-Channel (single)

Spek dan Sumber

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