IAUCN08S7L033ATMA1 vs IAUC41N06S5N102ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7L033ATMA1 sa pamamagitan ng Infineon at IAUC41N06S5N102ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ NakahandaInfineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7L033ATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (TJ) | -55C to +175C (junction) |
| Packhaging | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | — |
| Technology | OptiMOS 7 trench MOSFET | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020, typical for this package) | — |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Automotive Qualification | — | AEC-Q101 (per Infineon automotive MOSFET family) |
| Channel Polarity | — | N-Channel (single) |