IAUCN08S7N024ATMA1 vs IAUCN04S7L050HATMA1 比較
詳細並排比較 IAUCN08S7N024ATMA1 由 Infineon 與 IAUCN04S7L050HATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN08S7N024ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | OptiMOS™ 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 165 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Technology | OptiMOS 7 trench | Trench MOSFET, OptiMOS™ 7 40V |
| 封裝 | PG-TDSON-8-34 (8-pin, exposed pad) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C (typical automotive) | — |
| 功率耗散 (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (family-level, automotive grade) |
| RoHS Compliance | Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | — |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| RoHS 狀態 | — | Compliant |