IAUCN10S7N021ATMA1 vs IPG16N10S461AATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7N021ATMA1 disebabkan oleh Infineon dan IPG16N10S461AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S7N021ATMA1 IPG16N10S461AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) OptiMOS™ trench
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 175 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] —
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8-10 (Wettable Flank)
Jenis Pemasangan Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Type — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 16 A
On-Resistance R_DS(on) typ. — 61 mΩ
Total Power Dissipation (Ptot) — 29 W (T_C = 25°C)
Configuration — 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. — [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature — 175 °C
Gambaran Suhu Operasi — -55 °C to +175 °C
Terminal Count — 8
Aras MSL — [DATA_NEEDED: MSL rating]
Built-in Body Diode — Yes
Channel Mode — Enhancement

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