IAUCN10S7N021ATMA1 vs IPG16N10S461AATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S7N021ATMA1 dari Infineon dan IPG16N10S461AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S7N021ATMA1 IPG16N10S461AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) OptiMOS™ trench
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 175 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] —
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8-10 (Wettable Flank)
Tipe Mounting Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Type — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 16 A
On-Resistance R_DS(on) typ. — 61 mΩ
Total Power Dissipation (Ptot) — 29 W (T_C = 25°C)
Configuration — 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. — [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature — 175 °C
Rentang Suhu Kerja — -55 °C to +175 °C
Terminal Count — 8
Level MSL — [DATA_NEEDED: MSL rating]
Built-in Body Diode — Yes
Channel Mode — Enhancement

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon