IAUCN10S7N021ATMA1 vs IPG16N10S461AATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN10S7N021ATMA1 sa pamamagitan ng Infineon at IPG16N10S461AATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ NakahandaInfineon
IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΩ MOSFET | Infineon
IPG16N10S461AATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN10S7N021ATMA1 | IPG16N10S461AATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | OptiMOS™ trench |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 175 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8-10 (Wettable Flank) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Type | — | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) | — | 16 A |
| On-Resistance R_DS(on) typ. | — | 61 mΩ |
| Total Power Dissipation (Ptot) | — | 29 W (T_C = 25°C) |
| Configuration | — | 2 N-Channel (Dual, separate) |
| Gate Threshold Voltage V_GS(th) typ. | — | [DATA_NEEDED: gate threshold voltage] |
| Maximum Junction Temperature | — | 175 °C |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Terminal Count | — | 8 |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Built-in Body Diode | — | Yes |
| Channel Mode | — | Enhancement |