IAUS300N08S5N011TATMA1 vs ISC151N08NM6ATMA1 Comparison

Detailed side-by-side comparison of IAUS300N08S5N011TATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Active

Specification Comparison

Parameter IAUS300N08S5N011TATMA1 ISC151N08NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Technology OptiMOS-5 (trench MOSFET) OptiMOS 6
Drain-Source Voltage (V_DS) 80 V —
Continuous Drain Current (I_D, Tj) 300 A —
Power Dissipation (P_D, Tc) 375 W —
R_DS(on) Max @ V_GS=10V 1.1 mOhm —
Gate Threshold Voltage (V_GS(th)) 3 V (max) —
Total Gate Charge (Q_G) @ 10V 231 nC —
Output Capacitance (C_OSS) 130 pF (typ) —
Reverse Transfer Capacitance (C_RSS) 16.25 nF (typ) —
Operating Temperature Range -55 C to +175 C (Tj) —
Package PG-HDSOP-16-2 (HDSOP-16) PG-TDSON-8 FL
Mounting Type Surface Mount Surface Mount
Number of Channels 1 —
RoHS Status Compliant Compliant
Automotive Qualified Yes (Infineon automotive part) —
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (TA=25°C) — 9.2 A
Continuous Drain Current (TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Number of Pins — 8
Channel Mode — Enhancement
Operating Temperature — -55 °C to +175 °C

Datasheets & Resources

Browse All Products Create BOM Request Quote