IAUTN04S7N004ATMA1 vs IAUCN04S7N019GATMA1 Comparison

Detailed side-by-side comparison of IAUTN04S7N004ATMA1 by Infineon and IAUCN04S7N019GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUTN04S7N004ATMA1

IAUTN04S7N004ATMA1 - 40V 0.38mΞ© 350A OptiMOS 7 | Infineon

IAUTN04S7N004ATMA1 βœ“ Active
Infineon
IAUCN04S7N019GATMA1

IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon

IAUCN04S7N019GATMA1 βœ“ Active

Specification Comparison

Parameter IAUTN04S7N004ATMA1 IAUCN04S7N019GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.05 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7
Technology N-Channel Trench MOSFET β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25C [DATA_NEEDED: ID at TC=25C] β€”
Continuous Drain Current (ID) at Tj 350 A β€”
On-Resistance RDS(on) max 0.38 mΞ© β€”
Power Dissipation (PD) at TC 255 W β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Gate Charge (Qg) [DATA_NEEDED: Qg total] β€”
Operating Temperature Range -55C to +175C [DATA_NEEDED: junction temperature range from datasheet]
Package PG-HSOF-8-8 (TOLL 10x12) PG-THSOG-4-1 (SSO4G 5x6 mm)
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 Automotive β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Polarity N-Channel β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID, Tj) β€” 147 A
On-Resistance RDS(on) typical β€” 1.95 mOhm
Maximum Power Dissipation (Tc) β€” 81 W
Substrate Compatibility β€” IMS substrates and legacy PCB
Automotive Qualification β€” AEC-Q101 (per family datasheet)
Tape and Reel Packaging β€” Yes (per ATMA1 suffix)

Datasheets & Resources

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