IAUTN04S7N004ATMA1 vs IAUCN04S7N019GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUTN04S7N004ATMA1 disebabkan oleh Infineon dan IAUCN04S7N019GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUTN04S7N004ATMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | [DATA_NEEDED: ID at TC=25C] | — |
| Continuous Drain Current (ID) at Tj | 350 A | — |
| On-Resistance RDS(on) max | 0.38 mΩ | — |
| Power Dissipation (PD) at TC | 255 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Gambaran Suhu Operasi | -55C to +175C | [DATA_NEEDED: junction temperature range from datasheet] |
| Kemasan | PG-HSOF-8-8 (TOLL 10x12) | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 Automotive | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Polarity | N-Channel | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tj) | — | 147 A |
| On-Resistance RDS(on) typical | — | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | — | 81 W |
| Substrate Compatibility | — | IMS substrates and legacy PCB |
| Automotive Qualification | — | AEC-Q101 (per family datasheet) |
| Tape and Reel Packaging | — | Yes (per ATMA1 suffix) |