IAUTN04S7N004ATMA1 vs IAUCN04S7N019GATMA1 Perbandingan
Perbandingan bersamaan detil IAUTN04S7N004ATMA1 dari Infineon dan IAUCN04S7N019GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUTN04S7N004ATMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | [DATA_NEEDED: ID at TC=25C] | — |
| Continuous Drain Current (ID) at Tj | 350 A | — |
| On-Resistance RDS(on) max | 0.38 mΩ | — |
| Power Dissipation (PD) at TC | 255 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Rentang Suhu Kerja | -55C to +175C | [DATA_NEEDED: junction temperature range from datasheet] |
| Paket | PG-HSOF-8-8 (TOLL 10x12) | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 Automotive | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Polarity | N-Channel | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tj) | — | 147 A |
| On-Resistance RDS(on) typical | — | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | — | 81 W |
| Substrate Compatibility | — | IMS substrates and legacy PCB |
| Automotive Qualification | — | AEC-Q101 (per family datasheet) |
| Tape and Reel Packaging | — | Yes (per ATMA1 suffix) |