IAUZN04S7L030ATMA1 vs IAUC64N08S5L075ATMA1 比較

詳細並排比較 IAUZN04S7L030ATMA1 由 Infineon 與 IAUC64N08S5L075ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUZN04S7L030ATMA1 IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 ✓ 啟用中
Infineon
IAUC64N08S5L075ATMA1 IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon

IAUC64N08S5L075ATMA1 ✓ 啟用中

規格比較

參數 IAUZN04S7L030ATMA1 IAUC64N08S5L075ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: total gate charge]
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
封裝 PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8-33 (5x6 mm)
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101 qualified
RoHS Compliance Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL rating] MSL1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Part Number — IAUC64N08S5L075ATMA1
電晶體類型 — N-Channel MOSFET
Technology — OptiMOS™ 5
Continuous Drain Current (ID) at TC=25°C — 64 A (TJ-limited)
On-Resistance (RDS(on)) max at VGS=10V — 7.5 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage absolute maximum]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Power Dissipation (PD) at TC=25°C — 75 W
工作接面溫度 — -55 °C to +175 °C
腳位數 — 8

資料表與資源

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