IAUZN04S7L030ATMA1 vs IAUC64N08S5L075ATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN04S7L030ATMA1 dari Infineon dan IAUC64N08S5L075ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUZN04S7L030ATMA1 IAUC64N08S5L075ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: total gate charge]
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
Paket PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8-33 (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101 qualified
RoHS Compliance Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] MSL1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Part Number — IAUC64N08S5L075ATMA1
Tipe Transistor — N-Channel MOSFET
Technology — OptiMOS™ 5
Continuous Drain Current (ID) at TC=25°C — 64 A (TJ-limited)
On-Resistance (RDS(on)) max at VGS=10V — 7.5 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage absolute maximum]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Power Dissipation (PD) at TC=25°C — 75 W
Suhu Hubung Kerja — -55 °C to +175 °C
Jumlah Pin — 8

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