IAUZN08S7L177ATMA1 vs IAUC60N04S6L030HATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN08S7L177ATMA1 dari Infineon dan IAUC60N04S6L030HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZN08S7L177ATMA1 IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 ✓ Aktif
Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUZN08S7L177ATMA1 IAUC60N04S6L030HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 7 N-channel power MOSFET —
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) 35 A (Tj) —
Power Dissipation (PD) 45 W (Tc) —
On-Resistance (RDS(on)) 17.7 mΩ max —
Paket PG-TSDSON-8-44 (S3O8, 3x3 mm²) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Tipe Mounting Surface Mount Surface Mount
Polarity N-Channel —
Suhu Kerja -55C to +175C (Tj, automotive grade) —
Configuration Single Half-Bridge (2 N-Channel)
Qualification AEC-Q101 automotive —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Lead-Free Yes —
Status RoHS Compliant Compliant
Family Infineon OptiMOS 7 automotive, 80 V —
Manufacturer — Infineon Technologies
Part Series — OptiMOS 6
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
Suhu Hubung Kerja — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)

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