IGB30N60H3ATMA1 vs IGW30N60H3FKSA1 比較
詳細並排比較 IGB30N60H3ATMA1 由 Infineon 與 IGW30N60H3FKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IGB30N60H3ATMA1 | IGW30N60H3FKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | IGBTs | IGBTs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | TRENCHSTOP IGBT3 | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous DC Collector Current (IC, TC=25C) | 60 A | — |
| Pulsed Collector Current (ICpuls) | [DATA_NEEDED: pulsed collector current value] | — |
| 功率耗散 (Ptot) | 187 W | — |
| Gate-Emitter Voltage (VGE) | +/- 20 V | ±20 V (max) |
| 集極-射極飽和電壓 (Vce(sat)) | 1.95 V (typ, at IC=30 A, VGE=15 V) | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| Turn-Off Time (toff) | 262 ns (nominal) | — |
| Technology | Trench Field Stop | — |
| Configuration | Single IGBT | — |
| 封裝 | PG-TO263-3-2 (D2PAK) | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab |
| 安裝類型 | Surface Mount | Through Hole |
| 工作接面溫度 | -40C to +175C | — |
| Storage Temperature | -55C to +150C | — |
| Terminal Form | Gull Wing | — |
| 腳位數 | 3 (2 + Tab) | — |
| RoHS 狀態 | Compliant | Compliant |
| Switching Behavior | MOSFET-like turn-off | — |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Breakdown Voltage (VCE, max) | — | 600 V |
| Continuous Collector Current (IC, TC=25°C) | — | 60 A |
| Continuous Collector Current (IC, TC=100°C) | — | [DATA_NEEDED: IC at TC=100°C] |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | — | 187 W |
| Gate-Emitter Threshold Voltage (VGE(th), typ) | — | [DATA_NEEDED: VGE(th) typical] |
| VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C | — | [DATA_NEEDED: VCE(sat) value] |
| Turn-Off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff value] |
| 工作接面溫度範圍 | — | -40 °C to +175 °C |
| Anti-Parallel Diode | — | None (co-packaged without diode) |