IGB30N60H3ATMA1 vs IGW30N60H3FKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IGB30N60H3ATMA1 sa pamamagitan ng Infineon at IGW30N60H3FKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IGB30N60H3ATMA1 | IGW30N60H3FKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | IGBTs | IGBTs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | TRENCHSTOP IGBT3 | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous DC Collector Current (IC, TC=25C) | 60 A | — |
| Pulsed Collector Current (ICpuls) | [DATA_NEEDED: pulsed collector current value] | — |
| Pwersang Pinahihigpit (Ptot) | 187 W | — |
| Gate-Emitter Voltage (VGE) | +/- 20 V | ±20 V (max) |
| Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) | 1.95 V (typ, at IC=30 A, VGE=15 V) | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| Turn-Off Time (toff) | 262 ns (nominal) | — |
| Technology | Trench Field Stop | — |
| Configuration | Single IGBT | — |
| Packhaging | PG-TO263-3-2 (D2PAK) | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Temperature ng Junction na Operasyon | -40C to +175C | — |
| Storage Temperature | -55C to +150C | — |
| Terminal Form | Gull Wing | — |
| Bilang ng Pin | 3 (2 + Tab) | — |
| Tindminan RoHS | Compliant | Compliant |
| Switching Behavior | MOSFET-like turn-off | — |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Breakdown Voltage (VCE, max) | — | 600 V |
| Continuous Collector Current (IC, TC=25°C) | — | 60 A |
| Continuous Collector Current (IC, TC=100°C) | — | [DATA_NEEDED: IC at TC=100°C] |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | — | 187 W |
| Gate-Emitter Threshold Voltage (VGE(th), typ) | — | [DATA_NEEDED: VGE(th) typical] |
| VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C | — | [DATA_NEEDED: VCE(sat) value] |
| Turn-Off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff value] |
| Hanay ng Temperature ng Junction na Operasyon | — | -40 °C to +175 °C |
| Anti-Parallel Diode | — | None (co-packaged without diode) |