IGB30N60H3ATMA1 vs IGW30N60H3FKSA1 तुलना
विस्तृत दोनों ओर की तुलना IGB30N60H3ATMA1 द्वारा Infineon और IGW30N60H3FKSA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IGB30N60H3ATMA1 | IGW30N60H3FKSA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | IGBTs | IGBTs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | TRENCHSTOP IGBT3 | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous DC Collector Current (IC, TC=25C) | 60 A | — |
| Pulsed Collector Current (ICpuls) | [DATA_NEEDED: pulsed collector current value] | — |
| पावर डिसिपेशन (Ptot) | 187 W | — |
| Gate-Emitter Voltage (VGE) | +/- 20 V | ±20 V (max) |
| कलेक्टर-एमिटर सैचुरेशन वोल्टेज (Vce(sat)) | 1.95 V (typ, at IC=30 A, VGE=15 V) | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| Turn-Off Time (toff) | 262 ns (nominal) | — |
| Technology | Trench Field Stop | — |
| Configuration | Single IGBT | — |
| पैकेज | PG-TO263-3-2 (D2PAK) | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab |
| माउंटिंग प्रकार | Surface Mount | Through Hole |
| ऑपरेटिंग जंक्शन तापमान | -40C to +175C | — |
| Storage Temperature | -55C to +150C | — |
| Terminal Form | Gull Wing | — |
| पिन काउंट | 3 (2 + Tab) | — |
| RoHS स्थिति | Compliant | Compliant |
| Switching Behavior | MOSFET-like turn-off | — |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Breakdown Voltage (VCE, max) | — | 600 V |
| Continuous Collector Current (IC, TC=25°C) | — | 60 A |
| Continuous Collector Current (IC, TC=100°C) | — | [DATA_NEEDED: IC at TC=100°C] |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Maximum Power Dissipation (Ptot) | — | 187 W |
| Gate-Emitter Threshold Voltage (VGE(th), typ) | — | [DATA_NEEDED: VGE(th) typical] |
| VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C | — | [DATA_NEEDED: VCE(sat) value] |
| Turn-Off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff value] |
| ऑपरेटिंग जंक्शन तापमान रेंज | — | -40 °C to +175 °C |
| Anti-Parallel Diode | — | None (co-packaged without diode) |