IGW30N60H3FKSA1 - 600V 60A TRENCHSTOP IGBT3 TO-247 | Infineon
MPN: IGW30N60H3FKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.12 | $4.12 |
| 10 | $3.71 | $37.10 |
| 100 | $3.28 | $328.00 |
| 500 | $2.85 | $1,425.00 |
| 1,000 | $2.49 | $2,490.00 |
Drop-in alternatives for IGW30N60H3FKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IGW30N60H3
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IKW30N60H3
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IGW40N60H3FKSA1
β Drop-Inπ Reference alternative (not in catalog)
IKW40N60H3FKSA1
β Drop-Inπ Reference alternative (not in catalog)
IGW50N60H3FKSA1
β Drop-Inπ Reference alternative (not in catalog)
IKW50N60H3FKSA1
β Drop-Inπ Reference alternative (not in catalog)
IGW30N60H3FKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 |
| IGBT Type | Trench Field Stop |
| Collector-Emitter Breakdown Voltage (VCE, max) | 600 V |
| Continuous Collector Current (IC, TC=25Β°C) | 60 A |
| Maximum Power Dissipation (Ptot) | 187 W |
| Gate-Emitter Voltage (VGE) | Β±20 V (max) |
| Operating Junction Temperature Range | -40 Β°C to +175 Β°C |
| Package | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab |
| Anti-Parallel Diode | None (co-packaged without diode) |
| Mounting Type | Through Hole |
| RoHS Status | Compliant |
IGW30N60H3FKSA1 Pin Configuration
| Pin 1 | Gate (G) β MOS gate input; connect to gate driver output through gate resistor (typically 5-20 Ξ©) |
| Pin 2 | Collector (C) β Main current terminal; connected to the high-voltage DC bus positive rail through load |
| Pin 3 | Emitter (E) β Return path for collector current; typically tied to gate-driver return and Kelvin source if available |
| Pin TAB | Collector (TAB) β Mounting tab electrically common with Collector (pin 2); must be isolated from heatsink with TIM plus insulator |
Forward Bias Safe Operating Area (FBSOA)
Typical Applications
IGW30N60H3FKSA1 is suitable for 6 applications: Uninterruptible Power Supplies (UPS), Solar String Inverters, Industrial Motor Drives (Low-Voltage AC Drives), Induction Heating Cooktops and Welding Inverters, Power Factor Correction (PFC) Boost Stages, Switched-Mode Power Supply Inverter Stages.
Uninterruptible Power Supplies (UPS)
The IGW30N60H3FKSA1 is well suited to the inverter and PFC stages of double-conversion UPS systems operating from a 400 V rectified-bus. Its 600 V collector-emitter breakdown provides safe margin above the 565 V peak seen on European three-phase rectified rails, while the TRENCHSTOP IGBT3 cell structure delivers MOSFET-like turn-off switching that simplifies snubber design in the high-frequency leg. Designers pair it with an external ultrafast freewheeling diode such as IDH04G65C6 in the half-bridge, and a gate driver such as 1EDN7550B or 2ED2106S06F that swings the gate from 0 V to +15 V. The 187 W power dissipation rating supports continuous 30 A conduction in a properly heatsinked TO-247 package.
Recommended
Solar String Inverters
In residential and small-commercial string inverters converting 600-1000 V DC photovoltaic input to grid-tied AC, the IGW30N60H3FKSA1 serves as the primary switching element in the H4 or HERIC topology inverter stage. The TRENCHSTOP IGBT3 cell structure yields low Eoff losses at 16-32 kHz switching frequencies typical of single-phase PV inverters, which improves CEC-weighted efficiency. Its 600 V rating comfortably handles 600 V DC inputs and supports transformerless topologies with proper derating. The TO-247 through-hole package enables conventional PCB-mount heatsinking and easy replacement during field service, a critical factor for solar installations with 25-year lifetime expectations.
Recommended
Industrial Motor Drives (Low-Voltage AC Drives)
The IGW30N60H3FKSA1 is a strong fit for the inverter section of low-voltage (380-480 V AC mains) variable-frequency drives rated up to roughly 11 kW. The 600 V breakdown provides a 100 V safety margin above the rectified 678 V peak from a 480 V line, while the 30 A continuous current rating supports motors up to 7.5 kW at typical 4 kHz PWM. The TRENCHSTOP IGBT3 technology yields predictable switching losses across the full current range, enabling fixed dead-time design without adaptive compensation. In typical VFD schematics, the IGBT co-exists with a separate diode (e.g. IDD04SG60C) and uses a TLD21421EP or 6EDL04N02PR gate driver for reinforced isolation.
Recommended
Induction Heating Cooktops and Welding Inverters
Induction cooktops and small welding inverters operate at 20-100 kHz resonant switching frequencies where the TRENCHSTOP IGBT3 cell structure of the IGW30N60H3FKSA1 excels. Its square reverse-bias safe operating area (RBSOA) supports hard-switched turn-off of 60 A pulses at the inductor-resonant zero-voltage transitions, simplifying control loop design. The TO-247 package's 187 W power dissipation is sufficient for cooktop power levels up to roughly 3.5 kW per element at full DC-bus current. Designers typically use a half-bridge configuration with a co-packaged or discrete antiparallel diode, driven by a specialized resonant-mode controller.
Recommended
Power Factor Correction (PFC) Boost Stages
The IGW30N60H3FKSA1 is widely used as the boost switch in continuous-conduction-mode (CCM) PFC front ends for industrial SMPS, particularly at power levels above 3 kW where silicon IGBTs outperform 600 V superjunction MOSFETs on conduction loss. The 600 V breakdown handles 385-400 V DC-link rails in 3-phase PFC stages, and the TRENCHSTOP IGBT3 cell geometry delivers predictable switching losses at 40-70 kHz switching frequencies. The TO-247 package offers the thermal headroom required for continuous 30 A boost current with a 1-2 Β°C/W heatsink. PFC designs benefit from pairing the IGBT with a SiC boost diode (e.g. IDM08G120C5) for hard-switched efficiency above 40 kHz.
Recommended
Switched-Mode Power Supply Inverter Stages
In higher-power industrial SMPS topologies (full-bridge, phase-shifted full-bridge, or two-transistor forward converters above 5 kW), the IGW30N60H3FKSA1 serves as the primary side switching element when operating from 380-480 V AC inputs. Its 600 V rating covers rectified bus voltages up to roughly 565 V DC with derating, and its TRENCHSTOP IGBT3 architecture minimizes Eoff losses at the 50-100 kHz switching frequencies common to high-density telecom and server power supplies. The TO-247 package and through-hole mounting simplify thermal management and PCB layout for the primary-side current loop. Engineers often pair it with an IGBT-intelligent power module gate driver and a current-mode PWM controller.
Recommended
Recommended Products Summary
Engineering reference data for IGW30N60H3FKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGW30N60H3 | IKW30N60H3 | IGW40N60H3FKSA1 | IGW50N60H3FKSA1 | IKW50N60H3FKSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-247 (PG-TO247-3-1) | TO-247 (PG-TO247-3-1) | TO-247 (PG-TO247-3-1) | TO-247 (PG-TO247-3-1) | TO-247 (PG-TO247-3-1) | TO-247 (PG-TO247-3-1) |
| Collector-Emitter Breakdown (VCES) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (TC=25Β°C) | 60 A | 60 A | 60 A | 80 A | 100 A | 100 A |
| Nominal Current Class (Family) | 30 A | 30 A | 30 A | 40 A | 50 A | 50 A |
| Maximum Power Dissipation | 187 W | 187 W | 187 W | 306 W | 333 W | 333 W |
| Technology | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 (Trench Field Stop) |
| Co-Packaged Anti-Parallel Diode | No | No | Yes | No | No | Yes |
| Ordering Code Suffix | FKSA1 (tube packing) | Bare (no suffix; tube only) | Bare (no suffix; tube only) | FKSA1 (tube packing) | FKSA1 (tube packing) | FKSA1 (tube packing) |
| Approximate 1k-Piece Price (USD, as of 2026-09-14) | 2.49 | 2.49 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Discrete (no co-packaged diode) version of TRENCHSTOP IGBT3 family (vs IKW30N60H3)
- Lower conduction loss than 600V MOSFETs at high current (vs IPB60R190C6ATMA1 (600V MOSFET))
- MOSFET-like turn-off switching for predictable EMC (vs Older IRG4PF50W (gen-2 PT-IGBT))
Design Notes
At continuous 30 A conduction with VCE(sat) of 2.0 V typical and a switching frequency of 16 kHz, the per-device conduction loss is roughly 60 W plus switching loss. The TO-247 package has theta_JC of approximately 0.5 Β°C/W, so a heatsink with thermal resistance below 0.5 Β°C/W is required to keep junction temperature below 125 Β°C at 30 A continuous current. Always use a silicone thermal pad (not ceramic, which adds 0.5 Β°C/W) and verify torque on the mounting screw (0.7-0.9 NΒ·m) for repeatable thermal performance.
The gate-drive loop (gate driver output β gate resistor β gate β emitter β back to driver return) must be kept physically short and narrow to avoid parasitic inductance that causes gate ringing and possible dV/dt-induced turn-on. Estimated: a 1 nH parasitic inductance at 5 A/ns dI/dt produces 5 V of ringing, which can exceed VGE(th) and falsely re-trigger the IGBT. Place the gate resistor within 5 mm of the gate pin and use a wide, short emitter-return trace. A Kelvin source pin is not available on the TO-247, so the gate-driver return must be tied directly to the IGBT emitter pin, not to the power copper pour.
Do not drive the gate above +20 V (VGE absolute maximum); many gate-driver ICs default to +12 V output which is safe. Never leave the gate floating during power-up - if the driver is unpowered, a single dV/dt on the collector can charge the Miller capacitance and turn the IGBT partially on, leading to shoot-through. Add a 10 kΞ© gate-to-emitter pulldown resistor whenever the driver is in high-impedance state. Finally, verify VCE(sat) at the actual junction temperature, not just room temperature - VCE(sat) typically increases by 25% between 25 Β°C and 150 Β°C, which can shift the thermal design margin significantly.
Compliance Information
RoHS compliant per Infineon product page; AEC-Q100 not qualified (industrial grade); halogen-free status not explicitly stated in verified web data and marked unknown. Conflict-minerals compliance assumed per Infineon's standard supplier declarations.
