IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon
MPN: IGD08N120S7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.89 | $945.00 |
| 1,000 | $1.65 | $1,650.00 |
IGD08N120S7ATMA1 Overview
An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges a MOSFET gate input with a bipolar output stage, producing a voltage-controlled device with very low conduction loss at high currents. The IGBT sits in the wider hierarchy: power semiconductor -> discrete transistor -> switching device. IGBTs are widely used where MOSFETs' conduction losses become unacceptable at high voltages and where thyristors cannot be easily controlled by a gate signal. The S7 generation specifically targets industrial inverter and welding applications where switching frequencies of 20-50 kHz and high efficiency are simultaneously required.
Key features include a typical VCE(sat) of 1.65 V at the rated operating point, a co-packaged anti-parallel emitter diode for inductive-load commutation, and a wide operating junction temperature range suited to industrial environments. The PG-TO252-3 surface-mount package offers a low-profile footprint suitable for high-density power boards while providing a manageable thermal path through the drain tab.
Typical applications span induction heating inverters, welding power supplies, solar string inverters, UPS PFC and inverter stages, and motor drives in the low-to-mid kilowatt range. In each of these the IGD08N120S7's combination of 1200V blocking capability, 24A current handling, and S7 switching performance enables compact designs without sacrificing efficiency. As an industry-grade discrete, the part is well suited to commercial and industrial power conversion rather than automotive AEC-Q101 qualified systems.
When designing with this part, observe the 80% derating recommendation from Infineon for lifetime and reliability. Provide adequate copper area on the drain tab for thermal dissipation, place the gate drive resistor close to the gate pin, and ensure the gate-emitter voltage stays within the absolute maximum ratings even during fault transients.
Drop-in alternatives for IGD08N120S7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGD08N120S7ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Junction Temperature, Integrated Diode, Qualification.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IGD08N120S7
✅ Drop-In📋 Reference alternative (not in catalog)
IGD06N60TATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IKD10N60RC2ATMA1
✅ Drop-In✓ In Stock
$0.83 / Unit
View Datasheet →BSC014NE2LSIATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →BSS214NWH6327XTSA1
✅ Drop-In✓ In Stock
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View Datasheet →IGD08N120S7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | 24 A |
| Total Power Dissipation (Ptot) | 106 W |
| VCE(sat) at rated Ic | 1.65 V |
| Co-packaged Diode | Yes (anti-parallel emitter diode) |
| Operating Junction Temperature | -40C to +175C (industry grade) |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Technology | Trench Field Stop, 7th generation |
| Configuration | Single |
| RoHS Status | Compliant |
IGD08N120S7ATMA1 Pin Configuration
| Pin 1 | Gate — Gate input - voltage-controlled turn-on/off |
| Pin 2 | Collector (Drain tab) — Collector connection; also the bottom metal tab for heatsinking |
| Pin 3 | Emitter — Emitter / source connection |
Forward Bias Safe Operating Area (FBSOA) - IGD08N120S7
Typical Applications
IGD08N120S7ATMA1 is suitable for 6 applications: Induction Heating Inverter, Solar String Inverter, Uninterruptible Power Supply (UPS), Welding Power Supply, Industrial Motor Drive, EV Charging Station (AC-DC Stage).
Induction Heating Inverter
The IGD08N120S7ATMA1 fits resonant induction-heating inverters operating on a 400 V rectified bus with switching frequencies of 20-50 kHz. The trench-field-stop S7 cell structure delivers a VCE(sat) of 1.65 V at the rated 24 A point, keeping conduction losses manageable in the continuously-on zero-voltage-switching phase, while the co-packaged anti-parallel diode handles the inductive freewheeling current with low reverse-recovery charge. The 1200 V blocking rating provides generous margin against the resonant-tank overshoot that occurs when the load is suddenly decoupled. Designers typically place the device on a 2-4 square-inch copper pour on the DPAK drain tab to keep junction temperature below 125 C at full current.
Recommended
Solar String Inverter
In a single-phase or three-phase solar string inverter, the IGD08N120S7ATMA1 serves as the main switching device in the DC-AC bridge on a 600-800 V DC link. The 1200 V collector-emitter rating comfortably exceeds the maximum DC-link voltage under all European grid conditions including 10% over-voltage transients. Its S7 technology yields low switching losses at the 16-20 kHz switching frequencies used to keep magnetics small, and the 24 A continuous rating supports inverters up to approximately 10 kW without paralleling devices. The PG-TO252-3 surface-mount package is well suited to the high-density power boards inside modern string inverters.
Recommended
Uninterruptible Power Supply (UPS)
The IGD08N120S7ATMA1 is widely used in online UPS systems as the switching element in the PFC front-end and the DC-AC inverter stage. In the PFC stage it operates on a 400 V DC bus at switching frequencies of 20-40 kHz, where its 1.65 V saturation voltage translates into 1.5-2% conduction-loss efficiency. In the inverter stage it provides the same low-loss switching on the 400 V bus delivering 230 V AC output. The 24 A current rating supports 5-10 kVA UPS designs, and the 1200 V rating gives excellent margin against load-induced DC-link transients. The co-packaged diode simplifies the bridge layout significantly.
Recommended
Welding Power Supply
Welding inverter power supplies demand very high peak current pulses for short-arc forming, and the IGD08N120S7ATMA1 handles these pulses reliably thanks to its 24 A continuous rating and higher pulsed-current capability. The S7 trench-field-stop technology minimizes turn-off switching losses, which directly translates into cooler operation during the high-duty-cycle MMA welding process. Its 1200 V blocking voltage allows the use of a 540 V rectified mains bus typical of three-phase welding machines, with comfortable headroom for line transients. The PG-TO252-3 surface-mount package, while requiring careful thermal design, supports the compact welding-machine form factors preferred by professional users.
Recommended
Industrial Motor Drive
Variable-frequency drives for industrial motors in the 3-7 kW range commonly use 1200 V class IGBTs in a three-phase bridge topology, which is the sweet spot for the IGD08N120S7ATMA1. The S7 technology enables switching frequencies up to 20 kHz with low losses, allowing quieter motor operation and smaller output filter inductors. Its co-packaged anti-parallel diode eliminates the need for external commutation diodes, simplifying the BOM and improving thermal coupling. The 24 A continuous rating supports drives with continuous motor current up to approximately 15 A RMS, covering a large fraction of industrial pump and fan drive applications.
Recommended
EV Charging Station (AC-DC Stage)
Although not automotive-qualified, the IGD08N120S7ATMA1 is used in industrial AC-DC charging stages for e-mobility where AEC-Q101 is not mandatory. Its 1200 V rating handles the 400-800 V rectified DC bus, and its 24 A continuous rating supports 11-22 kW charging modules without paralleling. The S7 switching characteristics minimize losses at the 20-30 kHz switching frequencies preferred for compact charger designs. The PG-TO252-3 surface-mount package enables high-density PCB layouts favored in modern charging station enclosures.
Recommended
Recommended Products Summary
Engineering reference data for IGD08N120S7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGD08N120S7 | IGD06N60T | IKD10N60RC2ATMA1 | BSC014NE2LSIATMA1 | BSS214NWH6327XTSA1 |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon - same brand | Infineon - same brand | Infineon - same brand | Infineon - same brand | Infineon - same brand |
| Collector-Emitter Voltage (Vce max) | 1200 V | 1200 V | 600 V | 600 V | N/A (MOSFET, Vds=25V) | N/A (MOSFET, Vds=20V) |
| Device Type | IGBT (Trench Field Stop S7) | IGBT S7 | IGBT | IGBT + Diode | N-channel MOSFET (OptiMOS) | N-channel MOSFET (small-signal) |
| Co-packaged Diode | Yes | Yes | Yes | Yes | No (MOSFET body diode only) | No (MOSFET body diode only) |
Key Differentiators
- 1200 V class with 24 A continuous in compact DPAK (vs IGD06N60T)
- 7th-generation trench-field-stop technology (vs IKD10N60RC2ATMA1)
- IGBT specifically designed for switching applications (vs BSC014NE2LSIATMA1)
Design Notes
The PG-TO252-3 (DPAK) package relies on the bottom collector tab for heatsinking. For the IGD08N120S7ATMA1 dissipating up to 106 W, a copper-pour area of at least 2 square inches on the top and bottom layers connected by thermal vias is recommended for industrial-grade operation. Estimated: with 4 sq.in. of 2 oz copper on a 1 oz inner-plane stackup, the junction-to-ambient thermal resistance drops below 40 C/W, enabling continuous operation near the 24 A rating. Always verify with the datasheet thermal curves and the actual PCB layout.
Place the gate-drive resistor as close as possible to the gate pin (pin 1) of the IGD08N120S7ATMA1, and keep the gate-trace length short to minimize parasitic inductance that could cause ringing and false triggering. The emitter-return of the gate driver should connect to pin 3 (emitter) directly, not through a shared power ground, to avoid common-source inductance issues. Add a 10 kohm gate-emitter pull-down resistor to keep the IGBT off during controller startup or fault conditions.
The IGD08N120S7ATMA1 must never be operated above its absolute maximum Vce of 1200 V, including all transient overshoots from the DC bus and the resonant tank. Use a TVS diode or active clamping to limit the collector-emitter voltage to below 1100 V under all fault conditions. Per Infineon, derate operating conditions to no more than 80% of the absolute maximum ratings for optimum lifetime and reliability - this means staying below approximately 960 V on the DC link in steady state.
Estimated gate-charge losses for the IGD08N120S7ATMA1 at 20 kHz with +/-15 V gate drive are roughly 1-2 W depending on the gate-resistor value. Choose a gate resistor that limits the peak gate current below the gate-driver capability while still achieving the required switching speed - typically 10-33 ohms for IGBTs in this class. Lowering the gate resistor value speeds up switching and reduces switching loss, but increases EMI and dv/dt stress on the motor or transformer insulation.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100/Q101 qualified - this is an industry-grade discrete, not intended for automotive safety-critical applications.
